High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology.

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Bibliographic Details
Title: High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology.
Authors: Peng, Ping Chun1, Chen, Yu-Zheng1, Hsiao, Woan Yun2, Chen, Kuang-Hsin2, Lin, Ching-Pin2, Tien, Bor-Zen2, Chang, Tzong-Sheng2, Lin, Chrong Jung1, King, Ya-Chin1
Source: IEEE Electron Device Letters; Oct2015, Vol. 36 Issue 10, p1037-1039, 3p
Database: Applied Science & Technology Source
Description
ISSN:07413106
DOI:10.1109/LED.2015.2472300