APA (7th ed.) Citation

Peng, P. C., Chen, Y., Hsiao, W. Y., Chen, K., Lin, C., Tien, B., . . . King, Y. (2015). High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology. IEEE Electron Device Letters, 36(10), 1037. https://doi.org/10.1109/LED.2015.2472300

Chicago Style (17th ed.) Citation

Peng, Ping Chun, Yu-Zheng Chen, Woan Yun Hsiao, Kuang-Hsin Chen, Ching-Pin Lin, Bor-Zen Tien, Tzong-Sheng Chang, Chrong Jung Lin, and Ya-Chin King. "High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology." IEEE Electron Device Letters 36, no. 10 (2015): 1037. https://doi.org/10.1109/LED.2015.2472300.

MLA (9th ed.) Citation

Peng, Ping Chun, et al. "High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology." IEEE Electron Device Letters, vol. 36, no. 10, 2015, p. 1037, https://doi.org/10.1109/LED.2015.2472300.