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High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology.

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Title: High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology.
Authors: Peng, Ping Chun1, Chen, Yu-Zheng1, Hsiao, Woan Yun2, Chen, Kuang-Hsin2, Lin, Ching-Pin2, Tien, Bor-Zen2, Chang, Tzong-Sheng2, Lin, Chrong Jung1, King, Ya-Chin1
Source: IEEE Electron Device Letters; Oct2015, Vol. 36 Issue 10, p1037-1039, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 109993890
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology.
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; Oct2015, Vol. 36 Issue 10, p1037-1039, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=109993890
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1109/LED.2015.2472300
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 1037
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      – TitleFull: High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology.
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            NameFull: Lin, Ching-Pin
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            – D: 01
              M: 10
              Text: Oct2015
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              Y: 2015
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              Value: 10
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            – TitleFull: IEEE Electron Device Letters
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