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Enhanced Programming and Erasing Speeds of Charge-Trapping Flash Memory Device With Ge Channel.

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Bibliographic Details
Title:	Enhanced Programming and Erasing Speeds of Charge-Trapping Flash Memory Device With Ge Channel.
Authors:	Ye, Zong-Hao¹, Chang-Liao, Kuei-Shu¹, Liu, Li-Jung¹, Cheng, Jen-Wei¹, Fang, Hsin-Kai¹
Source:	IEEE Electron Device Letters; Dec2015, Vol. 36 Issue 12, p1314-1317, 4p
Database:	Applied Science & Technology Source

Description
ISSN:	07413106
DOI:	10.1109/LED.2015.2495344