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Enhanced Programming and Erasing Speeds of Charge-Trapping Flash Memory Device With Ge Channel.

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Title: Enhanced Programming and Erasing Speeds of Charge-Trapping Flash Memory Device With Ge Channel.
Authors: Ye, Zong-Hao1, Chang-Liao, Kuei-Shu1, Liu, Li-Jung1, Cheng, Jen-Wei1, Fang, Hsin-Kai1
Source: IEEE Electron Device Letters; Dec2015, Vol. 36 Issue 12, p1314-1317, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 111173279
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Enhanced Programming and Erasing Speeds of Charge-Trapping Flash Memory Device With Ge Channel.
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  Data: <searchLink fieldCode="AU" term="%22Ye%2C+Zong-Hao%22">Ye, Zong-Hao</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chang-Liao%2C+Kuei-Shu%22">Chang-Liao, Kuei-Shu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Liu%2C+Li-Jung%22">Liu, Li-Jung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Cheng%2C+Jen-Wei%22">Cheng, Jen-Wei</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Fang%2C+Hsin-Kai%22">Fang, Hsin-Kai</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; Dec2015, Vol. 36 Issue 12, p1314-1317, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=111173279
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1109/LED.2015.2495344
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 1314
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      – TitleFull: Enhanced Programming and Erasing Speeds of Charge-Trapping Flash Memory Device With Ge Channel.
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            NameFull: Ye, Zong-Hao
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            NameFull: Chang-Liao, Kuei-Shu
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            NameFull: Liu, Li-Jung
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            NameFull: Cheng, Jen-Wei
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            NameFull: Fang, Hsin-Kai
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              Text: Dec2015
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              Y: 2015
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