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Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories.

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Bibliographic Details
Title:	Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories.
Authors:	Hsiao, Yu-Ping^1,2, Yang, Wen-Luh¹, Lin, Li-Min^1,2, Chin, Fun-Tat^1,2, Lin, Yu-Hsien³, Yang, Ke-Luen⁴, Wu, Chi-Chang⁵, halfccwu@tmu.edu.tw
Source:	Microelectronics Reliability; Nov2015, Vol. 55 Issue 11, p2188-2197, 10p
Database:	Applied Science & Technology Source

Description
ISSN:	00262714
DOI:	10.1016/j.microrel.2015.08.013