APA (7th ed.) Citation

Hsiao, Y., Yang, W., Lin, L., Chin, F., Lin, Y., Yang, K., & Wu, C. (2015). Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories. Microelectronics Reliability, 55(11), 2188. https://doi.org/10.1016/j.microrel.2015.08.013

Chicago Style (17th ed.) Citation

Hsiao, Yu-Ping, Wen-Luh Yang, Li-Min Lin, Fun-Tat Chin, Yu-Hsien Lin, Ke-Luen Yang, and Chi-Chang Wu. "Improving Retention Properties by Thermal Imidization for Polyimide-based Nonvolatile Resistive Random Access Memories." Microelectronics Reliability 55, no. 11 (2015): 2188. https://doi.org/10.1016/j.microrel.2015.08.013.

MLA (9th ed.) Citation

Hsiao, Yu-Ping, et al. "Improving Retention Properties by Thermal Imidization for Polyimide-based Nonvolatile Resistive Random Access Memories." Microelectronics Reliability, vol. 55, no. 11, 2015, p. 2188, https://doi.org/10.1016/j.microrel.2015.08.013.