Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories.
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| Title: | Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories. |
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| Authors: | Hsiao, Yu-Ping1,2, Yang, Wen-Luh1, Lin, Li-Min1,2, Chin, Fun-Tat1,2, Lin, Yu-Hsien3, Yang, Ke-Luen4, Wu, Chi-Chang5, halfccwu@tmu.edu.tw |
| Source: | Microelectronics Reliability; Nov2015, Vol. 55 Issue 11, p2188-2197, 10p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 111322031 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Hsiao%2C+Yu-Ping%22">Hsiao, Yu-Ping</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Yang%2C+Wen-Luh%22">Yang, Wen-Luh</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Lin%2C+Li-Min%22">Lin, Li-Min</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Chin%2C+Fun-Tat%22">Chin, Fun-Tat</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Lin%2C+Yu-Hsien%22">Lin, Yu-Hsien</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Yang%2C+Ke-Luen%22">Yang, Ke-Luen</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Wu%2C+Chi-Chang%22">Wu, Chi-Chang</searchLink><relatesTo>5</relatesTo>, <i>halfccwu@tmu.edu.tw</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Microelectronics+Reliability%22">Microelectronics Reliability</searchLink>; Nov2015, Vol. 55 Issue 11, p2188-2197, 10p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=111322031 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.microrel.2015.08.013 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 10 StartPage: 2188 Titles: – TitleFull: Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Hsiao, Yu-Ping – PersonEntity: Name: NameFull: Yang, Wen-Luh – PersonEntity: Name: NameFull: Lin, Li-Min – PersonEntity: Name: NameFull: Chin, Fun-Tat – PersonEntity: Name: NameFull: Lin, Yu-Hsien – PersonEntity: Name: NameFull: Yang, Ke-Luen – PersonEntity: Name: NameFull: Wu, Chi-Chang IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 11 Text: Nov2015 Type: published Y: 2015 Identifiers: – Type: issn-print Value: 00262714 Numbering: – Type: volume Value: 55 – Type: issue Value: 11 Titles: – TitleFull: Microelectronics Reliability Type: main |
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