Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories.

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Title: Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories.
Authors: Hsiao, Yu-Ping1,2, Yang, Wen-Luh1, Lin, Li-Min1,2, Chin, Fun-Tat1,2, Lin, Yu-Hsien3, Yang, Ke-Luen4, Wu, Chi-Chang5, halfccwu@tmu.edu.tw
Source: Microelectronics Reliability; Nov2015, Vol. 55 Issue 11, p2188-2197, 10p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 111322031
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories.
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  Data: <searchLink fieldCode="AU" term="%22Hsiao%2C+Yu-Ping%22">Hsiao, Yu-Ping</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Yang%2C+Wen-Luh%22">Yang, Wen-Luh</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Lin%2C+Li-Min%22">Lin, Li-Min</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Chin%2C+Fun-Tat%22">Chin, Fun-Tat</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Lin%2C+Yu-Hsien%22">Lin, Yu-Hsien</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Yang%2C+Ke-Luen%22">Yang, Ke-Luen</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Wu%2C+Chi-Chang%22">Wu, Chi-Chang</searchLink><relatesTo>5</relatesTo>, <i>halfccwu@tmu.edu.tw</i>
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  Data: <searchLink fieldCode="JN" term="%22Microelectronics+Reliability%22">Microelectronics Reliability</searchLink>; Nov2015, Vol. 55 Issue 11, p2188-2197, 10p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=111322031
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.microrel.2015.08.013
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      – Code: eng
        Text: English
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        PageCount: 10
        StartPage: 2188
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      – TitleFull: Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories.
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            NameFull: Hsiao, Yu-Ping
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            NameFull: Yang, Wen-Luh
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            NameFull: Lin, Li-Min
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            NameFull: Chin, Fun-Tat
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            NameFull: Lin, Yu-Hsien
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            NameFull: Yang, Ke-Luen
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            – D: 01
              M: 11
              Text: Nov2015
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              Y: 2015
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