Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2 Stack Gate Dielectric.

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Bibliographic Details
Title: Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2 Stack Gate Dielectric.
Authors: Li, Chen-Chien1, Chang-Liao, Kuei-Shu1, Chi, Wei-Fong1, Li, Mong-Chi1, Chen, Ting-Chun1, Su, Tzu-Hsiang1, Chang, Yu-Wei1, Tsai, Chia-Chi1, Liu, Li-Jung1, Fu, Chung-Hao1, Lu, Chun-Chang1
Source: IEEE Electron Device Letters; Jan2016, Vol. 37 Issue 1, p12-15, 4p
Database: Applied Science & Technology Source
Description
ISSN:07413106
DOI:10.1109/LED.2015.2497348