APA (7th ed.) Citation

Li, C., Chang-Liao, K., Chi, W., Li, M., Chen, T., Su, T., . . . Lu, C. (2016). Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2 Stack Gate Dielectric. IEEE Electron Device Letters, 37(1), 12. https://doi.org/10.1109/LED.2015.2497348

Chicago Style (17th ed.) Citation

Li, Chen-Chien, et al. "Improved Electrical Characteristics of Ge PMOSFETs With ZrO2/HfO2 Stack Gate Dielectric." IEEE Electron Device Letters 37, no. 1 (2016): 12. https://doi.org/10.1109/LED.2015.2497348.

MLA (9th ed.) Citation

Li, Chen-Chien, et al. "Improved Electrical Characteristics of Ge PMOSFETs With ZrO2/HfO2 Stack Gate Dielectric." IEEE Electron Device Letters, vol. 37, no. 1, 2016, p. 12, https://doi.org/10.1109/LED.2015.2497348.