Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2 Stack Gate Dielectric.
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| Title: | Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2 Stack Gate Dielectric. |
|---|---|
| Authors: | Li, Chen-Chien1, Chang-Liao, Kuei-Shu1, Chi, Wei-Fong1, Li, Mong-Chi1, Chen, Ting-Chun1, Su, Tzu-Hsiang1, Chang, Yu-Wei1, Tsai, Chia-Chi1, Liu, Li-Jung1, Fu, Chung-Hao1, Lu, Chun-Chang1 |
| Source: | IEEE Electron Device Letters; Jan2016, Vol. 37 Issue 1, p12-15, 4p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 111983224 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2 Stack Gate Dielectric. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Li%2C+Chen-Chien%22">Li, Chen-Chien</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chang-Liao%2C+Kuei-Shu%22">Chang-Liao, Kuei-Shu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chi%2C+Wei-Fong%22">Chi, Wei-Fong</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+Mong-Chi%22">Li, Mong-Chi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chen%2C+Ting-Chun%22">Chen, Ting-Chun</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Su%2C+Tzu-Hsiang%22">Su, Tzu-Hsiang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chang%2C+Yu-Wei%22">Chang, Yu-Wei</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Tsai%2C+Chia-Chi%22">Tsai, Chia-Chi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Liu%2C+Li-Jung%22">Liu, Li-Jung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Fu%2C+Chung-Hao%22">Fu, Chung-Hao</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Lu%2C+Chun-Chang%22">Lu, Chun-Chang</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; Jan2016, Vol. 37 Issue 1, p12-15, 4p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=111983224 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/LED.2015.2497348 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 12 Titles: – TitleFull: Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2 Stack Gate Dielectric. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Li, Chen-Chien – PersonEntity: Name: NameFull: Chang-Liao, Kuei-Shu – PersonEntity: Name: NameFull: Chi, Wei-Fong – PersonEntity: Name: NameFull: Li, Mong-Chi – PersonEntity: Name: NameFull: Chen, Ting-Chun – PersonEntity: Name: NameFull: Su, Tzu-Hsiang – PersonEntity: Name: NameFull: Chang, Yu-Wei – PersonEntity: Name: NameFull: Tsai, Chia-Chi – PersonEntity: Name: NameFull: Liu, Li-Jung – PersonEntity: Name: NameFull: Fu, Chung-Hao – PersonEntity: Name: NameFull: Lu, Chun-Chang IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 01 Text: Jan2016 Type: published Y: 2016 Identifiers: – Type: issn-print Value: 07413106 Numbering: – Type: volume Value: 37 – Type: issue Value: 1 Titles: – TitleFull: IEEE Electron Device Letters Type: main |
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