Dynamic atomic layer epitaxy of InN on/in +c-GaN matrix: Effect of "In+N" coverage and capping timing by GaN layer on effective InN thickness.
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| Title: | Dynamic atomic layer epitaxy of InN on/in +c-GaN matrix: Effect of "In+N" coverage and capping timing by GaN layer on effective InN thickness. |
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| Authors: | Akihiko Yoshikawa1,2, yoshi@faculty.chiba-u.jp, Kazuhide Kusakabe1, Naoki Hashimoto1, Eun-Sook Hwang3, Takaomi Itoi3 |
| Source: | Applied Physics Letters; 1/11/2016, Vol. 108 Issue 2, p1-5, 5p, 1 Color Photograph, 2 Diagrams, 4 Graphs |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/1.4939977 |
