Dynamic atomic layer epitaxy of InN on/in +c-GaN matrix: Effect of "In+N" coverage and capping timing by GaN layer on effective InN thickness.
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| Title: | Dynamic atomic layer epitaxy of InN on/in +c-GaN matrix: Effect of "In+N" coverage and capping timing by GaN layer on effective InN thickness. |
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| Authors: | Akihiko Yoshikawa1,2, yoshi@faculty.chiba-u.jp, Kazuhide Kusakabe1, Naoki Hashimoto1, Eun-Sook Hwang3, Takaomi Itoi3 |
| Source: | Applied Physics Letters; 1/11/2016, Vol. 108 Issue 2, p1-5, 5p, 1 Color Photograph, 2 Diagrams, 4 Graphs |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 112326520 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Dynamic atomic layer epitaxy of InN on/in +c-GaN matrix: Effect of "In+N" coverage and capping timing by GaN layer on effective InN thickness. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Akihiko+Yoshikawa%22">Akihiko Yoshikawa</searchLink><relatesTo>1,2</relatesTo>, <i>yoshi@faculty.chiba-u.jp</i><br /><searchLink fieldCode="AU" term="%22Kazuhide+Kusakabe%22">Kazuhide Kusakabe</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Naoki+Hashimoto%22">Naoki Hashimoto</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Eun-Sook+Hwang%22">Eun-Sook Hwang</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Takaomi+Itoi%22">Takaomi Itoi</searchLink><relatesTo>3</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 1/11/2016, Vol. 108 Issue 2, p1-5, 5p, 1 Color Photograph, 2 Diagrams, 4 Graphs |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=112326520 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1063/1.4939977 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 1 Titles: – TitleFull: Dynamic atomic layer epitaxy of InN on/in +c-GaN matrix: Effect of "In+N" coverage and capping timing by GaN layer on effective InN thickness. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Akihiko Yoshikawa – PersonEntity: Name: NameFull: Kazuhide Kusakabe – PersonEntity: Name: NameFull: Naoki Hashimoto – PersonEntity: Name: NameFull: Eun-Sook Hwang – PersonEntity: Name: NameFull: Takaomi Itoi IsPartOfRelationships: – BibEntity: Dates: – D: 11 M: 01 Text: 1/11/2016 Type: published Y: 2016 Identifiers: – Type: issn-print Value: 00036951 Numbering: – Type: volume Value: 108 – Type: issue Value: 2 Titles: – TitleFull: Applied Physics Letters Type: main |
| ResultId | 1 |