Silicon photodetectors with triple p–n junctions in CMOS technology at 650- and 850-nm wavelengths.
Saved in:
| Title: | Silicon photodetectors with triple p–n junctions in CMOS technology at 650- and 850-nm wavelengths. |
|---|---|
| Authors: | Tsai, Y.-C.1, Zhong, Y.-N.1, Chou, F.-P.1, Huang, C.-A.1, Hsin, Y.-M.1, yhsin@ee.ncu.edu.tw |
| Source: | Electronics Letters (Wiley-Blackwell); 9/29/2016, Vol. 52 Issue 20, p1707-1708, 2p, 1 Diagram, 2 Charts, 2 Graphs |
| Database: | Applied Science & Technology Source |
| ISSN: | 00135194 |
|---|---|
| DOI: | 10.1049/el.2016.2260 |