Silicon photodetectors with triple p–n junctions in CMOS technology at 650- and 850-nm wavelengths.

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Bibliographic Details
Title: Silicon photodetectors with triple p–n junctions in CMOS technology at 650- and 850-nm wavelengths.
Authors: Tsai, Y.-C.1, Zhong, Y.-N.1, Chou, F.-P.1, Huang, C.-A.1, Hsin, Y.-M.1, yhsin@ee.ncu.edu.tw
Source: Electronics Letters (Wiley-Blackwell); 9/29/2016, Vol. 52 Issue 20, p1707-1708, 2p, 1 Diagram, 2 Charts, 2 Graphs
Database: Applied Science & Technology Source
Description
ISSN:00135194
DOI:10.1049/el.2016.2260