APA (7th ed.) Citation

Tsai, Y., Zhong, Y., Chou, F., Huang, C., & Hsin, Y. (2016). Silicon photodetectors with triple p–n junctions in CMOS technology at 650- and 850-nm wavelengths. Electronics Letters (Wiley-Blackwell), 52(20), 1707. https://doi.org/10.1049/el.2016.2260

Chicago Style (17th ed.) Citation

Tsai, Y.-C, Y.-N Zhong, F.-P Chou, C.-A Huang, and Y.-M Hsin. "Silicon Photodetectors with Triple P–n Junctions in CMOS Technology at 650- and 850-nm Wavelengths." Electronics Letters (Wiley-Blackwell) 52, no. 20 (2016): 1707. https://doi.org/10.1049/el.2016.2260.

MLA (9th ed.) Citation

Tsai, Y.-C, et al. "Silicon Photodetectors with Triple P–n Junctions in CMOS Technology at 650- and 850-nm Wavelengths." Electronics Letters (Wiley-Blackwell), vol. 52, no. 20, 2016, p. 1707, https://doi.org/10.1049/el.2016.2260.