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Silicon photodetectors with triple p–n junctions in CMOS technology at 650- and 850-nm wavelengths.

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Title: Silicon photodetectors with triple p–n junctions in CMOS technology at 650- and 850-nm wavelengths.
Authors: Tsai, Y.-C.1, Zhong, Y.-N.1, Chou, F.-P.1, Huang, C.-A.1, Hsin, Y.-M.1, yhsin@ee.ncu.edu.tw
Source: Electronics Letters (Wiley-Blackwell); 9/29/2016, Vol. 52 Issue 20, p1707-1708, 2p, 1 Diagram, 2 Charts, 2 Graphs
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 118276172
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Silicon photodetectors with triple p–n junctions in CMOS technology at 650- and 850-nm wavelengths.
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  Data: <searchLink fieldCode="AU" term="%22Tsai%2C+Y%2E-C%2E%22">Tsai, Y.-C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhong%2C+Y%2E-N%2E%22">Zhong, Y.-N.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chou%2C+F%2E-P%2E%22">Chou, F.-P.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Huang%2C+C%2E-A%2E%22">Huang, C.-A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Hsin%2C+Y%2E-M%2E%22">Hsin, Y.-M.</searchLink><relatesTo>1</relatesTo>, <i>yhsin@ee.ncu.edu.tw</i>
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  Data: <searchLink fieldCode="JN" term="%22Electronics+Letters+%28Wiley-Blackwell%29%22">Electronics Letters (Wiley-Blackwell)</searchLink>; 9/29/2016, Vol. 52 Issue 20, p1707-1708, 2p, 1 Diagram, 2 Charts, 2 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=118276172
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        Value: 10.1049/el.2016.2260
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        Text: English
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      – TitleFull: Silicon photodetectors with triple p–n junctions in CMOS technology at 650- and 850-nm wavelengths.
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            NameFull: Tsai, Y.-C.
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              Text: 9/29/2016
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              Y: 2016
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