Systematic study on dynamic atomic layer epitaxy of InN on/in 1c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Impact of excess In-atoms at high growth temperature.
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| Title: | Systematic study on dynamic atomic layer epitaxy of InN on/in 1c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Impact of excess In-atoms at high growth temperature. |
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| Authors: | Akihiko Yoshikawa1,2, yoshi@faculty.chiba-u.jp, Kazuhide Kusakabe1, Naoki Hashimoto1, Daichi Imai1, Eun-Sook Hwang1 |
| Source: | Journal of Applied Physics; 2016, Vol. 120 Issue 23, p235302-1-235302-13, 13p, 3 Diagrams, 12 Graphs |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.4972027 |
