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Systematic study on dynamic atomic layer epitaxy of InN on/in 1c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Impact of excess In-atoms at high growth temperature.

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Title: Systematic study on dynamic atomic layer epitaxy of InN on/in 1c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Impact of excess In-atoms at high growth temperature.
Authors: Akihiko Yoshikawa1,2, yoshi@faculty.chiba-u.jp, Kazuhide Kusakabe1, Naoki Hashimoto1, Daichi Imai1, Eun-Sook Hwang1
Source: Journal of Applied Physics; 2016, Vol. 120 Issue 23, p235302-1-235302-13, 13p, 3 Diagrams, 12 Graphs
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 120274187
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Systematic study on dynamic atomic layer epitaxy of InN on/in 1c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Impact of excess In-atoms at high growth temperature.
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  Data: <searchLink fieldCode="AU" term="%22Akihiko+Yoshikawa%22">Akihiko Yoshikawa</searchLink><relatesTo>1,2</relatesTo>, <i>yoshi@faculty.chiba-u.jp</i><br /><searchLink fieldCode="AU" term="%22Kazuhide+Kusakabe%22">Kazuhide Kusakabe</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Naoki+Hashimoto%22">Naoki Hashimoto</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Daichi+Imai%22">Daichi Imai</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Eun-Sook+Hwang%22">Eun-Sook Hwang</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; 2016, Vol. 120 Issue 23, p235302-1-235302-13, 13p, 3 Diagrams, 12 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=120274187
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      – Type: doi
        Value: 10.1063/1.4972027
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      – Code: eng
        Text: English
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        PageCount: 13
        StartPage: 235302-1
    Titles:
      – TitleFull: Systematic study on dynamic atomic layer epitaxy of InN on/in 1c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Impact of excess In-atoms at high growth temperature.
        Type: main
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          Name:
            NameFull: Akihiko Yoshikawa
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            NameFull: Kazuhide Kusakabe
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            NameFull: Naoki Hashimoto
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            NameFull: Daichi Imai
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            NameFull: Eun-Sook Hwang
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              Text: 2016
              Type: published
              Y: 2016
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              Value: 00218979
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              Value: 120
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            – TitleFull: Journal of Applied Physics
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