InGaAs-OI Substrate Fabrication on a 300 mm Wafer.
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| Title: | InGaAs-OI Substrate Fabrication on a 300 mm Wafer. |
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| Authors: | Sollier, Sebastien1,2, sebastien.sollier@cea.fr, Widiez, Julie1,2, Julie.widiez@cea.fr, Gaudin, Gweltaz3, gweltaz.gaudin@soitec.com, Mazen, Frederic1,2, frederic.mazen@cea.fr, Baron, Thierry1,4, Thierry.baron@cea.fr, Martin, Mickail1,4, mickail.martin@cea.fr, Roure, Marie-Christine1,2, marie-christine.roure@cea.fr, Besson, Pascal1,2, pascal.besson@cea.fr, Morales, Christophe1,2, christophe.morales@cea.fr, Beche, Elodie1,2, elodie.beche@cea.fr, Fournel, Frank1,2, frank.fournel@cea.fr, Favier, Sylvie1,2, sylvie.favier@cea.fr, Salaun, Amelie1,2, ameli.salaun@cea.fr, Gergaud, Patrice1,2, Patrice.gergaud@cea.fr, Cordeau, Maryline1,2, maryline.cordeau@cea.fr, Veytizou, Christellle3, Christelle.veytizou@soitec.com, Ecarnot, Ludovic3, ludovic.ecarnot@soitec.com, Delprat, Daniel3, daniel.delprat@soitec.com, Radu, Ionut3, ionut.radu@soitec.com, Signamarcheix, Thomas1,2, thomas.signamarcheix@cea.fr |
| Source: | Journal of Low Power Electronics & Applications; Dec2016, Vol. 6 Issue 4, p19, 5p, 1 Color Photograph, 2 Black and White Photographs |
| Database: | Applied Science & Technology Source |
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