Low-leakage sub-threshold 9 T-SRAM cell in 14-nm FinFET technology.
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| Title: | Low-leakage sub-threshold 9 T-SRAM cell in 14-nm FinFET technology. |
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| Authors: | Zeinali, Behzad1, beze@eng.au.dk, Madsen, Jens Kargaard1, Raghavan, Praveen2, Moradi, Farshad1 |
| Source: | International Journal of Circuit Theory & Applications; Nov2017, Vol. 45 Issue 11, p1647-1659, 13p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00989886 |
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| DOI: | 10.1002/cta.2280 |
