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Low-leakage sub-threshold 9 T-SRAM cell in 14-nm FinFET technology.

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Bibliographic Details
Title: Low-leakage sub-threshold 9 T-SRAM cell in 14-nm FinFET technology.
Authors: Zeinali, Behzad1, beze@eng.au.dk, Madsen, Jens Kargaard1, Raghavan, Praveen2, Moradi, Farshad1
Source: International Journal of Circuit Theory & Applications; Nov2017, Vol. 45 Issue 11, p1647-1659, 13p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 126316060
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1002/cta.2280
    Languages:
      – Code: eng
        Text: English
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        PageCount: 13
        StartPage: 1647
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      – TitleFull: Low-leakage sub-threshold 9 T-SRAM cell in 14-nm FinFET technology.
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            NameFull: Zeinali, Behzad
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            NameFull: Madsen, Jens Kargaard
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            NameFull: Raghavan, Praveen
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              Text: Nov2017
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              Y: 2017
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              Value: 45
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              Value: 11
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            – TitleFull: International Journal of Circuit Theory & Applications
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