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Enhanced structural and optoelectronic characteristics on Gallium-doped ZnO thin film by Intermittent process.

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Bibliographic Details
Title: Enhanced structural and optoelectronic characteristics on Gallium-doped ZnO thin film by Intermittent process.
Authors: Lin, Yen-Sheng1, yslin@isu.edu.tw, Wang, Kun-Ta1
Source: Journal of Materials Science: Materials in Electronics; Apr2018, Vol. 29 Issue 7, p6086-6091, 6p
Database: Applied Science & Technology Source
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Description
ISSN:09574522
DOI:10.1007/s10854-018-8583-5