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Enhanced structural and optoelectronic characteristics on Gallium-doped ZnO thin film by Intermittent process.

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Bibliographic Details
Title: Enhanced structural and optoelectronic characteristics on Gallium-doped ZnO thin film by Intermittent process.
Authors: Lin, Yen-Sheng1, yslin@isu.edu.tw, Wang, Kun-Ta1
Source: Journal of Materials Science: Materials in Electronics; Apr2018, Vol. 29 Issue 7, p6086-6091, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 128506711
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PubType: Academic Journal
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  Data: Enhanced structural and optoelectronic characteristics on Gallium-doped ZnO thin film by Intermittent process.
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  Data: <searchLink fieldCode="AU" term="%22Lin%2C+Yen-Sheng%22">Lin, Yen-Sheng</searchLink><relatesTo>1</relatesTo>, <i>yslin@isu.edu.tw</i><br /><searchLink fieldCode="AU" term="%22Wang%2C+Kun-Ta%22">Wang, Kun-Ta</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Apr2018, Vol. 29 Issue 7, p6086-6091, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=128506711
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      – Type: doi
        Value: 10.1007/s10854-018-8583-5
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 6086
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      – TitleFull: Enhanced structural and optoelectronic characteristics on Gallium-doped ZnO thin film by Intermittent process.
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            NameFull: Lin, Yen-Sheng
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            NameFull: Wang, Kun-Ta
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            – D: 01
              M: 04
              Text: Apr2018
              Type: published
              Y: 2018
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              Value: 29
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              Value: 7
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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