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THE IMPACT OF SUBSTRATE DOPING CONCENTRATION ON ELECTRICAL CHARACTERISTICS OF 45NM NMOS DEVICE.

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Title: THE IMPACT OF SUBSTRATE DOPING CONCENTRATION ON ELECTRICAL CHARACTERISTICS OF 45NM NMOS DEVICE.
Authors: SACHDEVA, NITIN1, VASHISHATH, MUNISH2, BANSAL, P. K.3
Source: i-Manager's Journal on Electronics Engineering; Dec2017-Feb2018, Vol. 8 Issue 2, p20-26, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 129817673
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PubType: Academic Journal
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  Data: <searchLink fieldCode="JN" term="%22i-Manager's+Journal+on+Electronics+Engineering%22">i-Manager's Journal on Electronics Engineering</searchLink>; Dec2017-Feb2018, Vol. 8 Issue 2, p20-26, 7p
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 7
        StartPage: 20
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      – TitleFull: THE IMPACT OF SUBSTRATE DOPING CONCENTRATION ON ELECTRICAL CHARACTERISTICS OF 45NM NMOS DEVICE.
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            NameFull: SACHDEVA, NITIN
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            NameFull: VASHISHATH, MUNISH
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            NameFull: BANSAL, P. K.
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            – D: 01
              M: 12
              Text: Dec2017-Feb2018
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              Y: 2017
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            – TitleFull: i-Manager's Journal on Electronics Engineering
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