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1/ƒ noise and carrier transport mechanisms in InSb p+-n junctions.

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Bibliographic Details
Title: 1/ƒ noise and carrier transport mechanisms in InSb p+-n junctions.
Authors: Tetyorkin, V. V.1, teterkin@isp.kiev.ua, Sukach, A. V.1, Tkachuk, A. I.2, Trotsenko, S. P.1
Source: Semiconductor Physics, Quantum Electronics & Optoelectronics; 2018, Vol. 21 Issue 4, p374-379, 6p
Database: Applied Science & Technology Source
Description
ISSN:15608034
DOI:10.15407/spqeo21.04.374