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Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer.

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Bibliographic Details
Title:	Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer.
Authors:	An, Ning¹, anning4252@126.com, Ma, Lei¹, Wen, Guanyu¹, Liang, Zhipeng¹, Zhang, Haitao¹, Gao, Tianshu¹, Fan, Cunbo¹
Source:	Applied Sciences (2076-3417); Jan2019, Vol. 9 Issue 1, p162, 7p
Database:	Applied Science & Technology Source
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Description
ISSN:	20763417
DOI:	10.3390/app9010162