APA (7th ed.) Citation

An, N., Ma, L., Wen, G., Liang, Z., Zhang, H., Gao, T., & Fan, C. (2019). Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer. Applied Sciences (2076-3417), 9(1), 162. https://doi.org/10.3390/app9010162

Chicago Style (17th ed.) Citation

An, Ning, Lei Ma, Guanyu Wen, Zhipeng Liang, Haitao Zhang, Tianshu Gao, and Cunbo Fan. "Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer." Applied Sciences (2076-3417) 9, no. 1 (2019): 162. https://doi.org/10.3390/app9010162.

MLA (9th ed.) Citation

An, Ning, et al. "Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer." Applied Sciences (2076-3417), vol. 9, no. 1, 2019, p. 162, https://doi.org/10.3390/app9010162.