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Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer.

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Title: Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer.
Authors: An, Ning1, anning4252@126.com, Ma, Lei1, Wen, Guanyu1, Liang, Zhipeng1, Zhang, Haitao1, Gao, Tianshu1, Fan, Cunbo1
Source: Applied Sciences (2076-3417); Jan2019, Vol. 9 Issue 1, p162, 7p
Database: Applied Science & Technology Source
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PubType: Academic Journal
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  Data: Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer.
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  Data: <searchLink fieldCode="JN" term="%22Applied+Sciences+%282076-3417%29%22">Applied Sciences (2076-3417)</searchLink>; Jan2019, Vol. 9 Issue 1, p162, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=134075224
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        Value: 10.3390/app9010162
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      – Code: eng
        Text: English
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      – TitleFull: Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer.
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              Text: Jan2019
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              Y: 2019
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