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Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer.

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Bibliographic Details
Title: Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer.
Authors: An, Ning1, anning4252@126.com, Ma, Lei1, Wen, Guanyu1, Liang, Zhipeng1, Zhang, Haitao1, Gao, Tianshu1, Fan, Cunbo1
Source: Applied Sciences (2076-3417); Jan2019, Vol. 9 Issue 1, p162, 7p
Database: Applied Science & Technology Source
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