DFT modelling of the edge dislocation in 4H-SiC.

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Bibliographic Details
Title: DFT modelling of the edge dislocation in 4H-SiC.
Authors: Łażewski, J.1, jan.lazewski@ifj.edu.pl, Jochym, P. T.1, Piekarz, P.1, Sternik, M.1, Parlinski, K.1, Cholewiński, J.2, Dłużewski, P.2, Krukowski, S.3
Source: Journal of Materials Science; Aug2019, Vol. 54 Issue 15, p10737-10745, 9p, 1 Color Photograph, 1 Chart, 4 Graphs
Database: Applied Science & Technology Source
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Description
ISSN:00222461
DOI:10.1007/s10853-019-03630-5