Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K.

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Bibliographic Details
Title: Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K.
Authors: Haeffner, T. D.1, tim.haeffner@vanderbilt.edu, Keller, R. F.2, Jiang, R.2, Sierawski, B. D.2, Mccurdy, M. W.1, Zhang, E. X.2, Mohammed, R. W.2, Ball, D. R.1, Alles, M. L.1, Reed, R. A.2, Schrimpf, R. D.2, Fleetwood, D. M.2
Source: IEEE Transactions on Nuclear Science; Jun2019, Vol. 66 Issue 6, p911-917, 7p
Database: Applied Science & Technology Source
Description
ISSN:00189499
DOI:10.1109/TNS.2019.2909720