APA (7th ed.) Citation

Haeffner, T. D., Keller, R. F., Jiang, R., Sierawski, B. D., Mccurdy, M. W., Zhang, E. X., . . . Fleetwood, D. M. (2019). Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K. IEEE Transactions on Nuclear Science, 66(6), 911. https://doi.org/10.1109/TNS.2019.2909720

Chicago Style (17th ed.) Citation

Haeffner, T. D., et al. "Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K." IEEE Transactions on Nuclear Science 66, no. 6 (2019): 911. https://doi.org/10.1109/TNS.2019.2909720.

MLA (9th ed.) Citation

Haeffner, T. D., et al. "Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K." IEEE Transactions on Nuclear Science, vol. 66, no. 6, 2019, p. 911, https://doi.org/10.1109/TNS.2019.2909720.