Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K.
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| Title: | Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K. |
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| Authors: | Haeffner, T. D.1, tim.haeffner@vanderbilt.edu, Keller, R. F.2, Jiang, R.2, Sierawski, B. D.2, Mccurdy, M. W.1, Zhang, E. X.2, Mohammed, R. W.2, Ball, D. R.1, Alles, M. L.1, Reed, R. A.2, Schrimpf, R. D.2, Fleetwood, D. M.2 |
| Source: | IEEE Transactions on Nuclear Science; Jun2019, Vol. 66 Issue 6, p911-917, 7p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00189499 |
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| DOI: | 10.1109/TNS.2019.2909720 |