Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K.
Saved in:
| Title: | Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K. |
|---|---|
| Authors: | Haeffner, T. D.1, tim.haeffner@vanderbilt.edu, Keller, R. F.2, Jiang, R.2, Sierawski, B. D.2, Mccurdy, M. W.1, Zhang, E. X.2, Mohammed, R. W.2, Ball, D. R.1, Alles, M. L.1, Reed, R. A.2, Schrimpf, R. D.2, Fleetwood, D. M.2 |
| Source: | IEEE Transactions on Nuclear Science; Jun2019, Vol. 66 Issue 6, p911-917, 7p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
|---|---|
| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 137099131 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Haeffner%2C+T%2E+D%2E%22">Haeffner, T. D.</searchLink><relatesTo>1</relatesTo>, <i>tim.haeffner@vanderbilt.edu</i><br /><searchLink fieldCode="AU" term="%22Keller%2C+R%2E+F%2E%22">Keller, R. F.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Jiang%2C+R%2E%22">Jiang, R.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Sierawski%2C+B%2E+D%2E%22">Sierawski, B. D.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Mccurdy%2C+M%2E+W%2E%22">Mccurdy, M. W.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhang%2C+E%2E+X%2E%22">Zhang, E. X.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Mohammed%2C+R%2E+W%2E%22">Mohammed, R. W.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Ball%2C+D%2E+R%2E%22">Ball, D. R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Alles%2C+M%2E+L%2E%22">Alles, M. L.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Reed%2C+R%2E+A%2E%22">Reed, R. A.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Schrimpf%2C+R%2E+D%2E%22">Schrimpf, R. D.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Fleetwood%2C+D%2E+M%2E%22">Fleetwood, D. M.</searchLink><relatesTo>2</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Nuclear+Science%22">IEEE Transactions on Nuclear Science</searchLink>; Jun2019, Vol. 66 Issue 6, p911-917, 7p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=137099131 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/TNS.2019.2909720 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 911 Titles: – TitleFull: Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Haeffner, T. D. – PersonEntity: Name: NameFull: Keller, R. F. – PersonEntity: Name: NameFull: Jiang, R. – PersonEntity: Name: NameFull: Sierawski, B. D. – PersonEntity: Name: NameFull: Mccurdy, M. W. – PersonEntity: Name: NameFull: Zhang, E. X. – PersonEntity: Name: NameFull: Mohammed, R. W. – PersonEntity: Name: NameFull: Ball, D. R. – PersonEntity: Name: NameFull: Alles, M. L. – PersonEntity: Name: NameFull: Reed, R. A. – PersonEntity: Name: NameFull: Schrimpf, R. D. – PersonEntity: Name: NameFull: Fleetwood, D. M. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 06 Text: Jun2019 Type: published Y: 2019 Identifiers: – Type: issn-print Value: 00189499 Numbering: – Type: volume Value: 66 – Type: issue Value: 6 Titles: – TitleFull: IEEE Transactions on Nuclear Science Type: main |
| ResultId | 1 |
