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Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect.

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Bibliographic Details
Title:	Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect.
Authors:	Mo, Haifeng^1,2, Zhang, Yaohui¹, Song, Helun¹
Source:	Active & Passive Electronic Components; 7/14/2019, p1-7, 7p, 5 Diagrams, 2 Charts, 7 Graphs
Database:	Applied Science & Technology Source
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Description
ISSN:	08827516
DOI:	10.1155/2019/8425198