Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor.

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Bibliographic Details
Title: Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor.
Authors: Lundh, James Spencer1, Chatterjee, Bikramjit1, Song, Yiwen1, Baca, Albert G.2, Kaplar, Robert J.2, Beechem, Thomas E.2, Allerman, Andrew A.2, Armstrong, Andrew M.2, Klein, Brianna A.2, Bansal, Anushka3, Talreja, Disha3, Pogrebnyakov, Alexej3, Heller, Eric4, Gopalan, Venkatraman3, Redwing, Joan M.3, Foley, Brian M.1, Choi, Sukwon1, sukwon.choi@psu.edu
Source: Applied Physics Letters; 10/7/2019, Vol. 115 Issue 15, pN.PAG-N.PAG, 5p, 1 Diagram, 4 Graphs
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/1.5115013