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Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor.

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Title: Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor.
Authors: Lundh, James Spencer1, Chatterjee, Bikramjit1, Song, Yiwen1, Baca, Albert G.2, Kaplar, Robert J.2, Beechem, Thomas E.2, Allerman, Andrew A.2, Armstrong, Andrew M.2, Klein, Brianna A.2, Bansal, Anushka3, Talreja, Disha3, Pogrebnyakov, Alexej3, Heller, Eric4, Gopalan, Venkatraman3, Redwing, Joan M.3, Foley, Brian M.1, Choi, Sukwon1, sukwon.choi@psu.edu
Source: Applied Physics Letters; 10/7/2019, Vol. 115 Issue 15, pN.PAG-N.PAG, 5p, 1 Diagram, 4 Graphs
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
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PubType: Academic Journal
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 10/7/2019, Vol. 115 Issue 15, pN.PAG-N.PAG, 5p, 1 Diagram, 4 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=139098976
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        Value: 10.1063/1.5115013
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              Text: 10/7/2019
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