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Phase-change characteristics of carbon-doped GeSbSe thin films for PRAM applications.

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Bibliographic Details
Title: Phase-change characteristics of carbon-doped GeSbSe thin films for PRAM applications.
Authors: Kim, J. H.1, Park, J. H.2, Ko, D.-H.1, dhko@yonsei.ac.kr
Source: Journal of Materials Science: Materials in Electronics; Dec2019, Vol. 30 Issue 23, p20751-20757, 7p
Database: Applied Science & Technology Source
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Description
ISSN:09574522
DOI:10.1007/s10854-019-02442-2