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Phase-change characteristics of carbon-doped GeSbSe thin films for PRAM applications.

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Bibliographic Details
Title: Phase-change characteristics of carbon-doped GeSbSe thin films for PRAM applications.
Authors: Kim, J. H.1, Park, J. H.2, Ko, D.-H.1, dhko@yonsei.ac.kr
Source: Journal of Materials Science: Materials in Electronics; Dec2019, Vol. 30 Issue 23, p20751-20757, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 139745426
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Phase-change characteristics of carbon-doped GeSbSe thin films for PRAM applications.
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  Data: <searchLink fieldCode="AU" term="%22Kim%2C+J%2E+H%2E%22">Kim, J. H.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Park%2C+J%2E+H%2E%22">Park, J. H.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Ko%2C+D%2E-H%2E%22">Ko, D.-H.</searchLink><relatesTo>1</relatesTo>, <i>dhko@yonsei.ac.kr</i>
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=139745426
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1007/s10854-019-02442-2
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      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 20751
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      – TitleFull: Phase-change characteristics of carbon-doped GeSbSe thin films for PRAM applications.
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            NameFull: Kim, J. H.
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            NameFull: Park, J. H.
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            NameFull: Ko, D.-H.
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            – D: 01
              M: 12
              Text: Dec2019
              Type: published
              Y: 2019
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              Value: 30
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              Value: 23
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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