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The electronics transport mechanism of grain and grain boundary in semiconductive hafnium oxynitride thin film.

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Bibliographic Details
Title: The electronics transport mechanism of grain and grain boundary in semiconductive hafnium oxynitride thin film.
Authors: Lin, Zude1, Li, Xiuyan1, Zeng, Yujin1, You, Minmin1, Wang, Fangfang1, Liu, Jingquan1, jqliu@sjtu.edu.cn
Source: Journal of Materials Science; Mar2020, Vol. 55 Issue 7, p2881-2890, 10p, 2 Color Photographs, 1 Chart, 5 Graphs
Database: Applied Science & Technology Source
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Description
ISSN:00222461
DOI:10.1007/s10853-019-03952-4