APA (7th ed.) Citation

Lin, Z., Li, X., Zeng, Y., You, M., Wang, F., & Liu, J. (2020). The electronics transport mechanism of grain and grain boundary in semiconductive hafnium oxynitride thin film. Journal of Materials Science, 55(7), 2881. https://doi.org/10.1007/s10853-019-03952-4

Chicago Style (17th ed.) Citation

Lin, Zude, Xiuyan Li, Yujin Zeng, Minmin You, Fangfang Wang, and Jingquan Liu. "The Electronics Transport Mechanism of Grain and Grain Boundary in Semiconductive Hafnium Oxynitride Thin Film." Journal of Materials Science 55, no. 7 (2020): 2881. https://doi.org/10.1007/s10853-019-03952-4.

MLA (9th ed.) Citation

Lin, Zude, et al. "The Electronics Transport Mechanism of Grain and Grain Boundary in Semiconductive Hafnium Oxynitride Thin Film." Journal of Materials Science, vol. 55, no. 7, 2020, p. 2881, https://doi.org/10.1007/s10853-019-03952-4.