The electronics transport mechanism of grain and grain boundary in semiconductive hafnium oxynitride thin film.

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Title: The electronics transport mechanism of grain and grain boundary in semiconductive hafnium oxynitride thin film.
Authors: Lin, Zude1, Li, Xiuyan1, Zeng, Yujin1, You, Minmin1, Wang, Fangfang1, Liu, Jingquan1, jqliu@sjtu.edu.cn
Source: Journal of Materials Science; Mar2020, Vol. 55 Issue 7, p2881-2890, 10p, 2 Color Photographs, 1 Chart, 5 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 140205839
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PubType: Academic Journal
PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: The electronics transport mechanism of grain and grain boundary in semiconductive hafnium oxynitride thin film.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Lin%2C+Zude%22">Lin, Zude</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+Xiuyan%22">Li, Xiuyan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Zeng%2C+Yujin%22">Zeng, Yujin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22You%2C+Minmin%22">You, Minmin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Fangfang%22">Wang, Fangfang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Liu%2C+Jingquan%22">Liu, Jingquan</searchLink><relatesTo>1</relatesTo>, <i>jqliu@sjtu.edu.cn</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%22">Journal of Materials Science</searchLink>; Mar2020, Vol. 55 Issue 7, p2881-2890, 10p, 2 Color Photographs, 1 Chart, 5 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=140205839
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s10853-019-03952-4
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 10
        StartPage: 2881
    Titles:
      – TitleFull: The electronics transport mechanism of grain and grain boundary in semiconductive hafnium oxynitride thin film.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Lin, Zude
      – PersonEntity:
          Name:
            NameFull: Li, Xiuyan
      – PersonEntity:
          Name:
            NameFull: Zeng, Yujin
      – PersonEntity:
          Name:
            NameFull: You, Minmin
      – PersonEntity:
          Name:
            NameFull: Wang, Fangfang
      – PersonEntity:
          Name:
            NameFull: Liu, Jingquan
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 03
              Text: Mar2020
              Type: published
              Y: 2020
          Identifiers:
            – Type: issn-print
              Value: 00222461
          Numbering:
            – Type: volume
              Value: 55
            – Type: issue
              Value: 7
          Titles:
            – TitleFull: Journal of Materials Science
              Type: main
ResultId 1