Defect characterization of unannealed neutron transmutation doped silicon by means of deep temperature microwave detected photo induced current transient spectroscopy.
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| Title: | Defect characterization of unannealed neutron transmutation doped silicon by means of deep temperature microwave detected photo induced current transient spectroscopy. |
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| Authors: | Engst, C. R.1, Eisele, I.1,2, ignaz.eisele@emft.fraunhofer.de, Kutter, C.1,2 |
| Source: | Journal of Applied Physics; 1/21/2020, Vol. 127 Issue 3, p1-6, 6p, 1 Diagram, 2 Charts, 4 Graphs |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.5134663 |
