APA (7th ed.) Citation

Engst, C. R., Eisele, I., & Kutter, C. (2020). Defect characterization of unannealed neutron transmutation doped silicon by means of deep temperature microwave detected photo induced current transient spectroscopy. Journal of Applied Physics, 127(3), 1. https://doi.org/10.1063/1.5134663

Chicago Style (17th ed.) Citation

Engst, C. R., I. Eisele, and C. Kutter. "Defect Characterization of Unannealed Neutron Transmutation Doped Silicon by Means of Deep Temperature Microwave Detected Photo Induced Current Transient Spectroscopy." Journal of Applied Physics 127, no. 3 (2020): 1. https://doi.org/10.1063/1.5134663.

MLA (9th ed.) Citation

Engst, C. R., et al. "Defect Characterization of Unannealed Neutron Transmutation Doped Silicon by Means of Deep Temperature Microwave Detected Photo Induced Current Transient Spectroscopy." Journal of Applied Physics, vol. 127, no. 3, 2020, p. 1, https://doi.org/10.1063/1.5134663.