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Defect characterization of unannealed neutron transmutation doped silicon by means of deep temperature microwave detected photo induced current transient spectroscopy.

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Title: Defect characterization of unannealed neutron transmutation doped silicon by means of deep temperature microwave detected photo induced current transient spectroscopy.
Authors: Engst, C. R.1, Eisele, I.1,2, ignaz.eisele@emft.fraunhofer.de, Kutter, C.1,2
Source: Journal of Applied Physics; 1/21/2020, Vol. 127 Issue 3, p1-6, 6p, 1 Diagram, 2 Charts, 4 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 141347561
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Defect characterization of unannealed neutron transmutation doped silicon by means of deep temperature microwave detected photo induced current transient spectroscopy.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; 1/21/2020, Vol. 127 Issue 3, p1-6, 6p, 1 Diagram, 2 Charts, 4 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=141347561
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1063/1.5134663
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 1
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      – TitleFull: Defect characterization of unannealed neutron transmutation doped silicon by means of deep temperature microwave detected photo induced current transient spectroscopy.
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            NameFull: Engst, C. R.
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            NameFull: Eisele, I.
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            NameFull: Kutter, C.
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            – D: 21
              M: 01
              Text: 1/21/2020
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              Y: 2020
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              Value: 127
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