Interdependence of Electronic and Thermal Transport in AlxGa1–xN Channel HEMTs.

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Bibliographic Details
Title: Interdependence of Electronic and Thermal Transport in AlxGa1–xN Channel HEMTs.
Authors: Chatterjee, Bikramjit1, Armstrong, Andrew M.2, Klein, Brianna A.2, Bansal, Anushka3, Seyf, Hamid R.4, Talreja, Disha3, Pogrebnyakov, Alexej3, Heller, Eric5, Gopalan, Venkatraman3, Henry, Asegun S.6, Redwing, Joan M.3, Lundh, James Spencer1, Foley, Brian1, Choi, Sukwon1, sukwon.choi@psu.edu, Song, Yiwen1, Shoemaker, Daniel1, Baca, Albert G.2, Kaplar, Robert J.2, Beechem, Thomas E.2, Saltonstall, Christopher2
Source: IEEE Electron Device Letters; Mar2020, Vol. 41 Issue 3, p461-464, 4p
Database: Applied Science & Technology Source
Description
ISSN:07413106
DOI:10.1109/LED.2020.2969515