APA (7th ed.) Citation

Chatterjee, B., Armstrong, A. M., Klein, B. A., Bansal, A., Seyf, H. R., Talreja, D., . . . Saltonstall, C. (2020). Interdependence of Electronic and Thermal Transport in AlxGa1–xN Channel HEMTs. IEEE Electron Device Letters, 41(3), 461. https://doi.org/10.1109/LED.2020.2969515

Chicago Style (17th ed.) Citation

Chatterjee, Bikramjit, et al. "Interdependence of Electronic and Thermal Transport in AlxGa1–xN Channel HEMTs." IEEE Electron Device Letters 41, no. 3 (2020): 461. https://doi.org/10.1109/LED.2020.2969515.

MLA (9th ed.) Citation

Chatterjee, Bikramjit, et al. "Interdependence of Electronic and Thermal Transport in AlxGa1–xN Channel HEMTs." IEEE Electron Device Letters, vol. 41, no. 3, 2020, p. 461, https://doi.org/10.1109/LED.2020.2969515.