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Interdependence of Electronic and Thermal Transport in AlxGa1–xN Channel HEMTs.

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Title: Interdependence of Electronic and Thermal Transport in AlxGa1–xN Channel HEMTs.
Authors: Chatterjee, Bikramjit1, Armstrong, Andrew M.2, Klein, Brianna A.2, Bansal, Anushka3, Seyf, Hamid R.4, Talreja, Disha3, Pogrebnyakov, Alexej3, Heller, Eric5, Gopalan, Venkatraman3, Henry, Asegun S.6, Redwing, Joan M.3, Lundh, James Spencer1, Foley, Brian1, Choi, Sukwon1, sukwon.choi@psu.edu, Song, Yiwen1, Shoemaker, Daniel1, Baca, Albert G.2, Kaplar, Robert J.2, Beechem, Thomas E.2, Saltonstall, Christopher2
Source: IEEE Electron Device Letters; Mar2020, Vol. 41 Issue 3, p461-464, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 142008750
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; Mar2020, Vol. 41 Issue 3, p461-464, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=142008750
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        Value: 10.1109/LED.2020.2969515
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