Interdependence of Electronic and Thermal Transport in AlxGa1–xN Channel HEMTs.
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| Title: | Interdependence of Electronic and Thermal Transport in AlxGa1–xN Channel HEMTs. |
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| Authors: | Chatterjee, Bikramjit1, Armstrong, Andrew M.2, Klein, Brianna A.2, Bansal, Anushka3, Seyf, Hamid R.4, Talreja, Disha3, Pogrebnyakov, Alexej3, Heller, Eric5, Gopalan, Venkatraman3, Henry, Asegun S.6, Redwing, Joan M.3, Lundh, James Spencer1, Foley, Brian1, Choi, Sukwon1, sukwon.choi@psu.edu, Song, Yiwen1, Shoemaker, Daniel1, Baca, Albert G.2, Kaplar, Robert J.2, Beechem, Thomas E.2, Saltonstall, Christopher2 |
| Source: | IEEE Electron Device Letters; Mar2020, Vol. 41 Issue 3, p461-464, 4p |
| Database: | Applied Science & Technology Source |
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