Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices.

Saved in:
Bibliographic Details
Title: Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices.
Authors: Guo, Pengfei1, Burrow, Joshua A.1, Sevison, Gary A.1,2, Kwon, Heungdong3, Perez, Christopher3, Hendrickson, Joshua R.2, Smith, Evan M.2,4, Asheghi, Mehdi3, Goodson, Kenneth E.3, Agha, Imad1,5, Sarangan, Andrew M.1, asaragan1@udayton.edu
Source: Applied Physics Letters; 3/30/2020, Vol. 116 Issue 13, p1-4, 4p, 5 Graphs
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/1.5142552